94 GHz power amplifier MMIC development in state of the art MHEMT and AlGaN/GaN technology - Microwave Technology and Techniques Workshop 2012 - 21-23 May 2012

نویسندگان

  • M. van Heijningen
  • G. van der Bent
  • M. Rodenburg
  • F. E. van Vliet
  • R. Quay
  • P. Brückner
  • D. Schwantuschke
  • P. Jukkala
  • T. Narhi
چکیده

Solid-state power amplifiers at W-band (75 110 GHz) are attractive for the generation of local-oscillator (LO) power for super-heterodyne receivers operating at sub-millimetre wave frequencies, as needed for example in future space instruments for Earth observation. Apart from space applications there is a growing interest for these devices in for example millimetre wave imaging, communication and radar systems. A power amplifier with an output power of the order of 1W, followed by a chain of frequency multipliers, can provide sufficient LO power for a Schottky receiver up to terahertz frequencies. Gallium-Nitride (GaN) technology is especially interesting, and has shown power levels that exceed those achievable with other technologies, like Indium-Phosphide (InP) and Gallium-Arsenide (GaAs). Wattlevel output power at W-band has been demonstrated by advanced GaN technologies of HRL, Raytheon, and Fujitsu [1-3].

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تاریخ انتشار 2012